Deep Reactive Ion Etching

process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, tyimageally with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon vias (TSVs) in advanced 3D wafer level packaging technology.

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Labnonstop performs research and development on scientific startups and specialized in micro and nano fabrication, elecro analysis and storage, synthetic chemistry, nano materials, physical and chemical analysis, mechanical and laser process, culture Cells, 3D printing.


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